Magnetic topological transistor exploiting layer-selective transport

We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the "on" state (quantized conductance) and "off" (zero can be easily switched by changing relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within two-terminal junction. explain that proposed relies novel mechanism due to interplay topology, magnetism, layer degrees freedom MnBi$_{2}$Te$_{4}$. Its performance depends substantially film thickness type order. show states are robust against disorder nature surface states. Our work opens an avenue for applications layer-selective transport van der Waals antiferromagnet